MRF8S18120HR3 MRF8S18120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1760 19001780 1800 1820 1840 1860 1880 1920
η
D,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
15 30
Gps
21 60
20
55
19
50
45
35
IRL
Figure 2. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 72 Watts CW
-- 5
-- 2 0
17
40
-- 1 0
-- 1 5
ηD
VDD
=28Vdc,Pout
=72WCW,IDQ
= 800 mA
18
16
1760 19001780 1800 1820 1840 1860 1880 1920
η
D,
DRAIN
EFFICIENCY (%)
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout
= 46 Watts Avg.
21
1
50
IRL
20
45
40
18
35
3
16
2
G
ps
, POWER GAIN (dB)
EVM, ERROR VECTOR
MAGNITUDE (% rms)
VDD
=28Vdc,Pout
=46WAvg.
IDQ
= 800 mA, EDGE Modulation
19
17
15
ηD
IRL, INPUT RETURN LOSS (dB)
-- 5
-- 2 0
-- 1 0
-- 1 5
EVM
110100
-- 6 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
IMD, INTERMODULATIO
N DISTORTION (dBc)
IM7--U
IM5--U
IM5--L
IM3--L
IM7--L
IM3--U
VDD
=28Vdc,Pout
= 94 W (PEP)
IDQ
= 800 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
-- 1 0
Pout, OUTPUT POWER (WATTS) CW
1 10010
19
f = 1880 MHz
VDD
=28Vdc
IDQ
= 800 mA
18
16
15
Figure 5. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
17
1840 MHz
1805 MHz
1805 MHz
Gps
ηD
Gps
1880 MHz
1840 MHz
14
0300
η
D,
DRAIN EFFICIENCY (%)
75
60
45
30
15
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